Two-Dimensional Cold Electron Transport for Steep-Slope Transistors

Two-dimensional semiconductors for transistors

| In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited by the rate at which heat, generated from static power, is dissipated. The increase in static power and the leakage of current between the source and drain electrodes that causes this increase, are referred ...

High-Current Gain Two-Dimensional MoS₂-Base Hot-Electron Transistors.

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electro...

Electron-electron scattering in linear transport in two-dimensional systems.

We describe a method for numerically incorporating electron–electron scattering in quantum wells for small deviations of the distribution function from equilibrium, within the framework of the Boltzmann equation. For a given temperature T and density n, a symmetric matrix needs to be evaluated only once, and henceforth it can be used to describe electron–electron scattering in any Boltzmann equ...

Electron Transport in III-V Nitride Two-Dimensional Electron Gases

We present a study of electron scattering processes in AlGaN/GaN two-dimensional electron gases. A theoretical study of the effect of deformation potential scattering from strain fields surrounding dislocations is presented. The most important scattering mechanisms limiting electron transport are identified. We find that for AlGaN/GaN 2DEGs, mobility is limited by alloy scattering at high 2DEG ...

Electron transport in nitrogen-polar high electron mobility transistors